Wafers are pieces of circular silicon chips made from pure silicon wafers (99.9999%) .
As the shapes are round, they are known as wafers.
NEXTECK provides two kinds of wafers : silicon wafers for semiconductors and silicon wafers for solar batteries.
Semiconductor wafers are measured from four to six inches. The specifications are as follows:
Items | General Specification of Semiconductor Wafer | ||||||||
4 inch | 5 inch | 6 inch | |||||||
Resistivity(Ω/cm) | P-Type doped: Boron, 0.001-0.01, 0.01-0.5, >0.5 P++, P+, P- | ||||||||
N-Type doped: As, Phos, Sb, 0.001-1, 1-150 | |||||||||
Diameter tolerance (mm) | ±0.2 | ±0.2 | ±0.2 | ||||||
Orientation | (100), (111) | (100), (110), (111) | (100), (110), (111) | ||||||
Orientation tolerance | ±0.15° | ±0.15° | ±0.15° | ||||||
Edge Profile | T/R | T/R | T/R | ||||||
Edge Condition | 11/22 Ground | 11/22 Ground | 11/22 Ground/Polished | ||||||
Thickness(μm) | 300-650 | 400-650 | 550-750 | ||||||
Thickness tolerance (μm) | ±15 | ±15 | ±15 | ||||||
Backside Treatment | Etch | Poly | SiO2 | Etch | Poly | SiO2 | Etch | Poly | SiO2 |
Bow(μm) | ±25 | ±25(Before CVD) | ±25 | ±25(Before CVD) | ±25 | ±25(Before CVD) | |||
Warp(μm) | ≦25 | ≦25(Before CVD) | ≦25 | ≦25(Before CVD) | ≦25 | ≦25(Before CVD) | |||
Options | Laser marking, Poly-back, SiO2 seal, Back side damage |
NEXTECK provides monocrystalline silicons and polysilicons in solar energy level. Customized specifications are also supplied.
Below is some specifications of our 156mm Mono and Multi silicon wafers for your reference.
Category | Mono silicon wafer | Multi wafer |
156*156mm(Mono wafer) | 156*156mm(Multi wafer) | |
Growing method | CZ | |
Type | P | P |
Dopant | Boron | Boron |
Crystal Orientation | <100>+/-3 deg | |
Carbon content (atom/cm3) | <5*1016 | <5*1017 |
Oxygen content (atom/cm3) | <1.1*1018 | <1*1018 |
Etch Pit Defect (/cm3) | <=3000 | |
Resistivity | 0.5~3/3~6 | 0.5~3 |
Minority Carrier Lifetime (microsecond (μs) ) | >10 | >=2 |
Dimension (mm) | 156+/-0.5 | 156+/-0.5 |
Thickness (μm) | 200+/-20 | 200+/-20 |
TTV (μm) | <=30 | <=30 |
Bow/Warp (μm) | <100 | <50 / <100 |
Edge (Chip) | Depth≤0.5mm | Depth≤0.5mm |
Vertical≤1.0mm | Vertical≤3.0mm | |
Defect≤2 | Defect≤2 |
Each items of NEXTECK win years of accumulation and trust. Products used for semiconductors and electronic parts are very completed and with varied shaping methods,excellent forming property and size precision.